Devices Offer Industry-Low On-Resistance of 13.5 mΩ in 2 mm by 2 mm and 22 mΩ in 3 mm by 1.8 mm Footprint Areas at 4.5 V
Info time:2012-10-09 15:40:03
MALVERN, PENNSYLVANIA — Oct. 4, 2012 — Vishay Intertechnology, Inc. (NYSE: VSH) today extended its TrenchFET® Gen III family of p-channel power MOSFETs with a new single 12 V device in the thermally enhanced 2 mm by 2 mm PowerPAK® SC-70 package and a single 30 V device in the 3 mm by 1.8 mm PowerPAK ChipFET package with a thin 0.8 mm profile. Both MOSFETs combine their compact footprints with the industry’s lowest on-resistance at 4.5 V for their respective form factors.
Offered in the ultra-small PowerPAK SC-70 package, the 12 V SiA447DJ features an on-resistance of 13.5 mΩ at 4.5 V, which is 12 % lower than the closest competing device. In addition, the SiA447DJ offers low on-resistance of 19.4 mΩ at 2.5 V, 35 mΩ at 1.8 V, and 71 mΩ at 1.5 V. The 30 V Si5429DU is the first Gen III p-channel MOSFET in the 3 mm by 1.8 mm form factor, and its on-resistance of 22 mΩ at 4.5 V is 35 % lower than the closest competing device. In addition, the MOSFET offers an industry-low on-resistance of 15 mΩ at 10 V.
The SiA447DJ and Si5429DU will be used for battery or load switching in power management applications for portable electronics such as smart phones, tablet PCs, and mobile computing devices. The MOSFETs’ compact packages save PCB space in these products, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The MOSFETs’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
The 30 V rating of the Si5429DU makes it the device of choice for end products with multi-cell Li-ion batteries, while the SiA447DJ will be used when size and lower on-resistance are critical. In addition, the SiA447DJ’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.
The SiA447DJ and Si5429DU are 100 % Rg tested, and also RoHS-compliant and halogen-free. For more information on selecting the right TrenchFET Gen III p-channel MOSFET for your application, please visit http://www.vishay.com/mosfets/geniii-p/.
Samples and production quantities of the new SiA447DJ and Si5429DU TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders.